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    "language": "en",
    "title": "TOPCon Solar Cell Manufacturing Process: A Complete Step-by-Step Guide -  - Ooitech, the world's leading solar panel production line solutions provider, supply chain expert, solar panel making machine facotry",
    "description": "A detailed technical blog explaining the full production process of monocrystalline N-type TOPCon solar cells, covering texturing, boron diffusion, alkaline polishing, poly-Si deposition, annealing, ALD, SiNx coating and metallization.",
    "keywords": "TOPCon solar cell, solar cell manufacturing process, boron diffusion, tunnel oxide, poly-silicon deposition, ALD passivation, SiNx coating, solar cell metallization",
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    "headings": [
        {
            "level": 2,
            "text": "TOPCon Solar Cell Manufacturing Process: A Complete Step-by-Step Guide"
        },
        {
            "level": 3,
            "text": "TOPCon Solar Cell Manufacturing Process: A Complete Step-by-Step Guide"
        },
        {
            "level": 5,
            "text": "Introduction"
        },
        {
            "level": 5,
            "text": "1. Texturing (TEX)"
        },
        {
            "level": 6,
            "text": "Purpose of Texturing"
        },
        {
            "level": 6,
            "text": "Reaction Principle"
        },
        {
            "level": 6,
            "text": "Role of Texturing Additives"
        },
        {
            "level": 6,
            "text": "Process Flow"
        },
        {
            "level": 5,
            "text": "2. Boron Diffusion (B Diff)"
        },
        {
            "level": 6,
            "text": "Purpose"
        },
        {
            "level": 6,
            "text": "Process Principle"
        },
        {
            "level": 6,
            "text": "Process Flow"
        },
        {
            "level": 5,
            "text": "3. BSG Removal and Alkaline Etching"
        },
        {
            "level": 6,
            "text": "BSG Removal"
        },
        {
            "level": 6,
            "text": "Alkaline Etching"
        },
        {
            "level": 5,
            "text": "4. Deposition and Coating"
        },
        {
            "level": 6,
            "text": "Tunnel Oxide Layer (TOX)"
        },
        {
            "level": 6,
            "text": "Poly-Si Layer"
        },
        {
            "level": 6,
            "text": "Mask Layer"
        },
        {
            "level": 5,
            "text": "5. Annealing"
        },
        {
            "level": 5,
            "text": "6. PSG Removal and RCA Cleaning"
        },
        {
            "level": 5,
            "text": "7. ALD (Atomic Layer Deposition)"
        },
        {
            "level": 5,
            "text": "8. Front and Rear Silicon Nitride (SiNx)"
        },
        {
            "level": 5,
            "text": "9. Screen Printing (Metallization)"
        },
        {
            "level": 5,
            "text": "Conclusion"
        },
        {
            "level": 5,
            "text": "Tags :"
        },
        {
            "level": 5,
            "text": "Category"
        },
        {
            "level": 5,
            "text": "Recent Post"
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        {
            "level": 6,
            "text": "TOPCon Solar Cell Manufacturing Process: A Complete Step-by-Step Guide"
        },
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        },
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            "level": 6,
            "text": "Four-Cut Cell Technology: The Next Efficiency Code in the PV Industry"
        },
        {
            "level": 5,
            "text": "Popular Tags"
        },
        {
            "level": 3,
            "text": "Request A Quote"
        },
        {
            "level": 2,
            "text": "We deliver expertise you can trust our service"
        },
        {
            "level": 3,
            "text": "Cost-Effective Advantages"
        },
        {
            "level": 3,
            "text": "Our Experience Team"
        },
        {
            "level": 3,
            "text": "15+ Years Industry Experience"
        },
        {
            "level": 2,
            "text": "What Our Client Say's about us"
        },
        {
            "level": 3,
            "text": "Amjad"
        },
        {
            "level": 3,
            "text": "Mark"
        },
        {
            "level": 3,
            "text": "Jizzakh Polytechnic Institute"
        },
        {
            "level": 3,
            "text": "KTECH"
        },
        {
            "level": 2,
            "text": "Our Latest Products"
        },
        {
            "level": 3,
            "text": "SUNPOWER Back Contact Cell Welding Machine SL-1000 | IBC Back Contact Solar Cell Stringer"
        },
        {
            "level": 3,
            "text": "XJCM-13A2615 XJCM-13A+ IV Tester – PERC/HJT/TOPCon Module Testing"
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            "text": "Ooitech Solar Panel Laminator Complete Product Catalogue — All Models Technical Specifications & System Guide"
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        {
            "level": 3,
            "text": "CHT9951A/CHT9951B Solar Panel Hipot Insulation Resistance Tester | PV Module Safety Testing Equipment"
        },
        {
            "level": 3,
            "text": "OTCT-A Solar Cell Tester – Electric Performance & IV Curve"
        }
    ],
    "wordCount": 3981,
    "markdown": "# TOPCon Solar Cell Manufacturing Process: A Complete Step-by-Step Guide -  - Ooitech, the world's leading solar panel production line solutions provider, supply chain expert, solar panel making machine facotry\n\n> A detailed technical blog explaining the full production process of monocrystalline N-type TOPCon solar cells, covering texturing, boron diffusion, alkaline polishing, poly-Si deposition, annealing, ALD, SiNx coating and metallization.\n\n![TOPCon Solar Cell Manufacturing Process: A Complete Step-by-Step Guide](https://cdn.ooitech.com/static/upload/image/20260625/3fffaa885dcfbafc7d41439c979f3e14.webp)\n\n- ** 2026-06-25\n- ** 467 Views\n- ** [Blog](/Blog.html)\n\n### TOPCon Solar Cell Manufacturing Process: A Complete Step-by-Step Guide\n\n##### Introduction\n\nMonocrystalline N-type TOPCon solar cells have become one of the most promising high-efficiency technologies in the photovoltaic industry. Their production involves a long chain of carefully controlled steps, including texturing, boron diffusion, laser SE, annealing, alkaline polishing, PE-poly, annealing, RCA cleaning, coating, metallization and final testing and sorting. In this article, we walk through each main process step and explain why it matters.\n\n##### 1. Texturing (TEX)\n\n###### Purpose of Texturing\n\nThe goal of texturing is to remove the mechanical damage layer on the wafer surface and form a pyramid-shaped textured surface that increases light absorption. By reducing surface reflectivity, the short-circuit current (Isc) is improved, which ultimately raises the photoelectric conversion efficiency of the cell.\n\nWet etching is the mainstream texturing process today. Metal ions, damage layers and other contamination on the wafer surface act as recombination centers. Since separated electrons and holes must travel across and be collected at the wafer surface, these recombination centers reduce minority carrier lifetime, causing carriers to recombine before they can be output as external current. Surface oxide layers and organic contamination also affect the deposition and passivation quality of AlOx and SiNx layers, so thorough surface cleaning is critical and directly impacts cell efficiency.\n\n###### Reaction Principle\n\nTexturing relies on the anisotropic etching property of crystalline silicon, where low-concentration alkali and additives etch different crystal orientations at different rates. The etch rate on the (110) and (100) planes is far greater than on the (111) plane. After a certain etching time, four \"pyramid\" structures composed of (111) planes are left on the monocrystalline wafer surface.\n\nThe atomic arrangement differs across crystal planes, leading to different etch rates:\n\n- (100) plane: relatively loose atomic arrangement with more exposed chemical bonds, giving the fastest etch rate.\n- (110) plane: atomic density between (100) and (111), with a faster but slightly lower etch rate than (100).\n- (111) plane: most tightly packed atomic arrangement, with chemical bonds hard to attack, giving the slowest etch rate.\n\n###### Role of Texturing Additives\n\nAdditives lower the surface tension of silicon, promote the release of hydrogen bubbles formed during the reaction, and make the pyramids more uniform. They improve the wetting between the wafer surface and the reaction solution, weaken the etching strength of the NaOH solution, increase nucleation points and nucleation density, and promote the formation of large numbers of small pyramids. In general, the properties of the additive have the most direct influence on the textured pyramid surface.\n\n###### Process Flow\n\nThe texturing sequence typically includes: pre-cleaning with NaOH and H2O2 (assisted by ultrasonic cleaning at 60°C, followed by pure water rinsing) to remove organics, metal impurities and saw damage; alkaline texturing using about 0.6% NaOH and 0.4% additive at 82°C for 420 seconds to form the pyramid texture; post-cleaning to remove residual organics; acid cleaning using dilute acid (3.15% HCl + 7.1% HF) to neutralize residual alkali and remove the oxide layer; slow pull-out pre-dehydration to remove the water film by surface tension; and finally drying with 90°C hot air.\n\n##### 2. Boron Diffusion (B Diff)\n\n###### Purpose\n\nUnder high temperature, boron atoms diffuse into the surface of the N-type wafer to form a PN junction. The built-in field of the PN junction separates the photo-generated carriers to output current externally. P-type wafers, with high hole concentration, use phosphorus doping for junction formation; N-type wafers, with high electron concentration, use boron doping.\n\n###### Process Principle\n\nBoron trichloride (BCl3) passes through a quartz tube at 800-900°C and reacts with oxygen to form B2O3, which deposits on the wafer surface with nitrogen carrier gas and reacts with Si to generate boron atoms, forming a borosilicate glass (BSG) layer. The boron atoms then diffuse into the wafer to form the PN junction. BCl3 is a colorless fuming liquid or gas with a density of 1.35 kg/m3, a melting point of -107.3°C and a boiling point of 12.5°C. It is non-flammable, irritating and pungent, decomposing in water to form hydrogen chloride and boric acid with significant heat release. The intermediate product B2O3, with a melting point of 450°C and boiling point of 1860°C, remains liquid throughout the process and is strongly corrosive to quartz components.\n\nBoron diffusion is more difficult than phosphorus diffusion, so the TOPCon route places higher demands on equipment, including higher uniformity, higher diffusion temperatures (usually above 1000°C) and longer diffusion times (film formation often takes up to 240 minutes), which increases the equipment and production cost at the junction formation stage.\n\n###### Process Flow\n\nDiffusion is carried out in two ways. Pre-deposition diffusion (the BSG deposition step) uses a lower temperature and keeps the wafer in a saturated impurity atmosphere, so the surface impurity concentration stays constant; this is known as constant surface source diffusion. Redistribution diffusion pushes the boron from the BSG into the wafer at a higher temperature in an oxygen-rich atmosphere without external impurities; here the surface concentration changes over time, which is called limited surface source diffusion, with a Gaussian impurity distribution.\n\nThe typical process steps are: vacuum pumping to reach low pressure; heating to the diffusion temperature (800-900°C); holding the temperature while further reducing pressure; leak detection under low pressure; pre-oxidation to form a 1nm SiO2 layer to slow the next diffusion step and make boron diffusion more uniform; diffusion/deposition by introducing the boron source for active pre-deposition and passive drive-in; further heating above 900°C to increase diffusion rate and depth; post-oxidation to form a SiO2 layer over 100nm to control boron content, deepen the junction, form a protective layer and getter substrate impurities; cooling to a safe tube-opening temperature; and breaking the vacuum with N2 to restore atmospheric pressure.\n\n##### 3. BSG Removal and Alkaline Etching\n\n###### BSG Removal\n\nAfter boron diffusion, the wafer rear and edges carry a thick BSG layer (40-100nm oxide). This borosilicate glass layer adversely affects subsequent processes and may cause PN junction leakage, so chemical etching and cleaning are required after doping. Before alkaline etching, an inline single-side HF process removes the rear and edge BSG, while the front BSG is preserved as a mask during alkaline etching to protect the front structure.\n\nThe wafer first enters the inline HF cleaning equipment, where roughly 60% HF dissolves the rear BSG into solution while a water film protects the front BSG, followed by about 0.5 minutes of pure water rinsing. The sequence includes: applying a water film using the hydrophilicity of SiO2 to protect the front BSG; HF etching of the rear and edge BSG; a water gun step to refresh the possibly contaminated water film; water washing to remove residual HF; acid cleaning to remove residual impurity ions; and drying the front water film.\n\n###### Alkaline Etching\n\nThe purpose of alkaline etching is to remove the PN junction on the rear and edges to prevent leakage, and to create a uniform, clean rear morphology in preparation for rear passivation.\n\nThere are two main approaches. Secondary texturing is similar in principle to the first texturing, but the additive must reduce the reaction rate between BSG and alkali. Alkaline polishing uses high-concentration alkali and additives to accelerate the alkali-silicon reaction, weaken the anisotropic etching characteristic and form a highly reflective polished morphology. The alkaline etching additive protects the front BSG, lowers its reaction rate with alkali to prevent over-etching, keeps the BSG as a mask for later steps, lowers surface tension to release hydrogen bubbles, improves wetting and increases nucleation density.\n\n##### 4. Deposition and Coating\n\nThis stage deposits the Tunnel Oxide (TOX), Poly-Si layer and Mask. Deposition mainly takes place in vacuum vapor phase and can be divided into Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD). PVD vaporizes a material source into atoms, molecules or ions and deposits it on the substrate under low pressure; CVD generates deposits through chemical reactions on the substrate; and ALD deposits material layer by layer as single atomic layers.\n\n###### Tunnel Oxide Layer (TOX)\n\nThe tunnel oxide layer is based on the quantum tunneling effect, using an ultra-thin oxide (typically 1-2nm) as a barrier. Between the n-type silicon substrate and the doped poly-Si layer, it enables carrier-selective transport: electrons (majority carriers) tunnel through the oxide into the poly-Si layer, while holes (minority carriers) face a higher barrier height (about 4.5-4.8eV) and are blocked. It also creates band bending and field-effect passivation, where the work function difference between the doped poly-Si and the substrate bends the interface energy bands and forms an electrostatic field that increases majority carriers and repels minority carriers, further reducing interface recombination.\n\nThe oxide can be prepared by thermal oxidation (compatible with LPCVD) or by PECVD, PEALD and thermal oxidation (compatible with PECVD). In terms of film density, PEALD gives the best passivation but at higher equipment cost, while thermal oxidation and PECVD offer better economics. ALD typically gives about 0.7nm, thermal oxidation about 1.3nm, and the tunneling mechanism is generally achieved at thicknesses below 1.6nm. LPCVD is more mature, with advantages such as simple control and high film quality, but tends to form a wrap-around doped poly-Si layer at the front edge that must be cleaned off, and has a slow film rate. PECVD poly-Si is a newer technology with faster deposition, in-situ doping and lower wrap-around, but its maturity still needs improvement and it can suffer from dust, high hydrogen content and bubble formation during high-temperature annealing.\n\n###### Poly-Si Layer\n\nPolycrystalline silicon (Poly) is made of countless tiny silicon grains, with grain sizes typically from tens to hundreds of nanometers and grain boundaries between them. The poly-Si layer is usually phosphorus-doped to form highly doped n-type poly-Si, improving conductivity, enabling carrier-selective transport and forming good ohmic contact with the substrate.\n\nPoly-Si preparation involves both deposition and doping. Deposition mainly uses LPCVD or PECVD with a thickness of about 100-150nm; the amorphous film changes crystallinity during annealing, transforming from a microcrystalline-amorphous mixed phase into polycrystalline and activating passivation. For doping, LPCVD usually deposits an intrinsic poly-Si layer first and then completes phosphorus doping via a diffusion furnace or ion implantation (ex-situ doping), since doping during slow LPCVD deposition would slow it further. PECVD has higher film efficiency and can complete phosphorus doping during coating (in-situ doping). LPCVD, the mainstream technology for poly-Si, works by thermally decomposing silane (SiH4) into silicon atoms that deposit into a film. Note that thicker poly-Si causes more serious FCA (parasitic) loss and greater short-circuit current loss, and higher phosphorus doping increases FCA absorption and current loss.\n\n###### Mask Layer\n\nThe mask layer is usually a SiO2 film about 10nm thick grown after poly-Si deposition to protect the rear structure, mainly preventing subsequent wet processes from etching the poly-Si layer. To ensure the rear structure is not damaged in the tank-type wet equipment, after the poly process a SiOx mask (about 10nm) is grown on the rear surface using silane and nitrous oxide (note: silane and oxygen carry explosion risk in non-vacuum environments).\n\nThe process steps are: vacuum preheating to bring the wafer to the required temperature; pre-deposition of intrinsic silicon source (gas only, no RF, to fill the tube uniformly and stabilize pressure); deposition of intrinsic silicon source (RF on, to deposit an undoped film that blocks and buffers phosphorus from the doped poly); pre-deposition of doped silicon source (gas only); deposition of doped silicon source (RF on, to deposit a phosphorus-doped poly film); oxide mask formation by PECVD SiOx; and N2/Ar purging to push SiH4 and N2O out of the tube to prevent combustion when opening the furnace door.\n\n##### 5. Annealing\n\nThe purpose of annealing is to convert the amorphous silicon grown by PECVD into polycrystalline silicon, activate phosphorus atoms and advance the junction depth, and form pinholes. The process introduces BN2 (boron nitride) and slowly heats to 890-920°C, where the BN2 is driven in at high temperature to activate the phosphorus atoms in the poly film and form effective doping.\n\nThere is a relationship between annealing and TOX: with the tunnel oxide unchanged, raising the annealing temperature produces more pinholes and in-diffusion, lowering contact resistivity and improving FF while still meeting passivation requirements; at the same annealing temperature, a thicker tunnel oxide produces more pinholes and in-diffusion and a higher saturation current.\n\n##### 6. PSG Removal and RCA Cleaning\n\nDuring PEALD deposition of the n+-poly-Si film, a local n+-poly layer forms on the wafer front, covered by a thin Mask (SiOx) film. Single-side HF removes the SiOx, then an alkaline bath removes the front n+-poly-Si. The wafer passes sequentially through the etching tank, alkaline tank and cleaning tank for chemical reactions before drying.\n\nThe purpose of RCA is to remove wrap-around plating and perform edge etching to prevent edge leakage, and to clean the wafer by removing front and rear BSG and the mask and dehydrating it in preparation for the front and rear passivation films. Since poly is polycrystalline silicon, wrap-around removal uses alkaline polishing with high-concentration alkali and additives.\n\nThe RCA additives clean inorganic substances and residual products to improve surface wetting, act as reaction catalysts to accelerate the bonding of OH- with silicon and speed up wrap-around and edge etching, and reduce the alkali etching rate of silicon dioxide to protect the front BSG and rear mask from over-etching.\n\nThe process steps are: inline HF to remove the PSG formed on the front and edges after N2 annealing while keeping the rear PSG to protect the rear poly; alkaline polishing with NaOH and additive to remove excess front and edge poly; alkaline washing to remove residual additives and impurities; acid cleaning to neutralize residual alkali and remove metal ions; slow pull-out using room-temperature deionized water with a robot to prevent water marks; and drying at 90°C to prevent residual liquid on wafers and carriers.\n\n##### 7. ALD (Atomic Layer Deposition)\n\nAtomic layer deposition coats material as single atomic layers on the substrate and is characterized by its self-limiting nature, which is the foundation of ALD. Through time or spatial intervals, the substrate is alternately exposed to different precursors. When the substrate is in precursor A's atmosphere, A is chemically adsorbed onto the surface until saturation, then stops; when exposed to precursor B, B reacts with the already-adsorbed A, producing byproducts until the first precursor is fully consumed and the reaction stops automatically, forming the required atomic layer. ALD repeats this reaction to build the desired film.\n\nOn the wafer rear, AlOx passivation reduces the rear surface recombination rate. Aluminum oxide carries fixed negative charges located right at the interface between the aluminum oxide and the silicon oxide on the wafer surface; this high-density negative charge ensures effective field passivation. Aluminum oxide also provides excellent chemical passivation, saturating the dangling bonds on the crystalline silicon surface and reducing interface state density.\n\nThe process steps are: pre-deposition (gas only, no RF, filling the tube uniformly and stabilizing pressure, kept short to avoid gas waste and safety hazards); deposition (RF on, with TMA forming plasma that reacts with the surface to form AlOx, then inert gas purging, repeated for 40 cycles); and Ar purging to push TMA and O2 out of the tube to prevent TMA combustion when opening the furnace door.\n\n##### 8. Front and Rear Silicon Nitride (SiNx)\n\nSiNx coating serves several purposes. It protects the cell surface, since silicon nitride has very high strength that holds up to 1200°C, excellent chemical corrosion resistance against almost all inorganic acids and NaOH below 30%, and is a high-performance electrical insulator. It provides anti-reflection, with an optimal single-layer refractive index of 1.96 in air; increasing silicon content strengthens surface passivation, and the literature reports surface recombination velocity dropping below 20cm/s at a refractive index of 2.3, with the best bulk passivation between 2.1 and 2.3. It also prevents oxidation through its dense structure. TOPCon front emitter passivation mainly uses aluminum oxide plus SiNx:H film, while rear passivation mainly uses poly-Si.\n\nThe SiNx passivation mechanism works in two ways. Chemical passivation reduces interface defect density by reducing dangling bonds, either by growing a surface layer that gives atoms enough time and energy to saturate dangling bonds, or by depositing a hydrogen-rich dielectric film and releasing hydrogen during sintering so it bonds with dangling bonds. Field-effect passivation reduces the number of minority carriers reaching the surface by generating an electric field near the surface that repels carriers of the same polarity, achieved by lowering high surface doping concentration or adding a dielectric layer with high fixed charge.\n\nThe SiNx process steps are: pre-deposition (gas only, no RF, filling the tube and stabilizing pressure); deposition 1-2-3 (RF on, introducing SiH4 and NH3 to form three SiNx layers with gradually decreasing Si-N ratio, since a higher Si-N ratio gives a higher refractive index); deposition 4 (RF on, SiH4, O2 and NH3 forming a SiONx layer); deposition 5 (RF on, SiH4 and O2 forming a SiO2 layer); and N2 purging of the lines and tube to remove reactive gas and prevent SiH4 explosion when opening the furnace door.\n\n##### 9. Screen Printing (Metallization)\n\nAfter texturing, diffusion and coating complete the PN junction and passivation, the cell can generate current under light. To extract and collect this current, front and rear electrodes are printed on the cell surface, usually through screen printing, drying and sintering.\n\nThe screen printing system consists of five elements: squeegee, ink (paste), screen, substrate (wafer) and printing platform. Suitable paste printing performance (viscosity, shear-thinning ability) is the prerequisite for large-scale mass printing, and the screen mesh count, wire diameter and designed line width largely determine the printed morphology. In operation, paste passes through the patterned mesh openings, and a squeegee applies pressure while moving across the screen, pressing paste from the pattern openings onto the wafer. The paste's viscosity keeps it adhered within range, and the squeegee maintains linear contact with the screen and substrate, the contact line moving with the squeegee to complete the print stroke.\n\nThe paste must offer excellent printability for mass production, good ohmic contact with the emitter for low contact resistivity and higher FF, minimal damage to the emitter to limit metallization-induced Voc loss, and the lowest possible bulk resistivity to reduce current loss. The process steps are: drying to evaporate organics in the paste; pre-sintering to melt the glass frit, dissolve silver particles and open the passivation layer; sintering to dissolve more metal into the glass and bond it together; and cooling so the metal dissolved in the glass precipitates on the surface, forming ohmic contact between metal and semiconductor.\n\n##### Conclusion\n\nThe TOPCon manufacturing process is a precise sequence of texturing, doping, passivation, deposition, annealing and metallization steps, each engineered to maximize carrier selectivity and minimize recombination for higher conversion efficiency.\n\nooitech's view: ooitech believes that TOPCon's high efficiency comes from the synergy of tunnel oxide and passivated contact technology, where every clean, deposition and annealing step works together to push the limits of carrier selectivity and surface passivation.\n\n---\n\n##### Tags :\n\n\n![](/template/ooitech/assets/img/shape/06.png)\n\n![](https://cdn.ooitech.com/static/upload/image/20250909/1757399770541443.webp)\n\n### Request A Quote\n\nAll uploads are secure and confidential.\n\n## We deliver expertise you can trust our service\n\nDirect-from-Factory Equipment.\n\n![](/template/ooitech/assets/img/icon/money-2.svg)\n\n### Cost-Effective Advantages\n\nWe deliver exceptional value, maximizing results while optimizing budgets for clients.\n\n![](/template/ooitech/assets/img/icon/staff.svg)\n\n### Our Experience Team\n\nOur skilled professionals specialize in innovative solutions and tailored strategies.\n\n![](/template/ooitech/assets/img/icon/certified.svg)\n\n### 15+ Years Industry Experience\n\nDeep expertise ensures reliable, trend-aware, and proven outcomes for success.\n\n![](https://cdn.ooitech.com/static/upload/image/20250910/1757477357667605.webp )\n\n![](https://cdn.ooitech.com/static/upload/image/20250910/1757477724911512.webp)\n\n![](/template/ooitech/assets/img/shape/06.png)\n\n## What Our Client Say's about us\n\nClient testimonials praise our deep understanding of their challenges, which leads to innovative solutions and strong ROI. 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The kindest person and professional in his field\n\n![](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_2026041716444445.webp)\n\n### Jizzakh Polytechnic Institute\n\n![](/template/ooitech/assets/img/icon/quote.svg)\n\nThanks to Ooitech for providing highly suitable BC solar cell experimental equipment.\n\n![](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1776426122864564.webp)\n\n### KTECH\n\n## Our Latest Products\n\n![SUNPOWER Back Contact Cell Welding Machine SL-1000 | IBC Back Contact Solar Cell Stringer](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1774263750726273.webp)\n\n- [** Rachael](/sunpower-back-contact-cell-welding-machine-sl-1000-ibc-back-contact-solar-cell-stringer.html)\n- [** 45140](/sunpower-back-contact-cell-welding-machine-sl-1000-ibc-back-contact-solar-cell-stringer.html)\n\n### SUNPOWER Back Contact Cell Welding Machine SL-1000 | IBC Back Contact Solar Cell Stringer\n\nSUNPOWER Back Contact Cell Welding Machine SL-1000 by Ooitech features electromagnetic welding, CCD+SCARA robot positioning, dual cell loading, and automatic loading/unloading. Capacity up to 600 pcs/h for 1/3 cut cells. Supports 125mm and 166mm cell size\n\n![XJCM-13A2615 XJCM-13A+ IV Tester – PERC/HJT/TOPCon Module Testing](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1774506523267868.webp)\n\n- [** Rachael](/XJCM-13A2615-High-Efficiency-Solar-Module-IV-Tester-Advanced-Testing-Solution-for-PERC-HJT-TopCon-IB.html)\n- [** 67127](/XJCM-13A2615-High-Efficiency-Solar-Module-IV-Tester-Advanced-Testing-Solution-for-PERC-HJT-TopCon-IB.html)\n\n### XJCM-13A2615 XJCM-13A+ IV Tester – PERC/HJT/TOPCon Module Testing\n\nXJCM-13A2615 IV tester – A+A+A+, 2600×1500mm, 10–100ms pulse for PERC, HJT, TOPCon & IBC. Eliminates capacitance effect. IEC 60904-9:2020 compliant. For high-efficiency module QC.\n\n![Solar Junction Box – Bypass Diode, IP67, PV Module Output](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_2026032739568544.jpg.webp)\n\n- [** Rachael](/Solar-Junction-Box-J-Box-Advanced-PV-Module-Protection-Power-Management-System.html)\n- [** 13775](/Solar-Junction-Box-J-Box-Advanced-PV-Module-Protection-Power-Management-System.html)\n\n### Solar Junction Box – Bypass Diode, IP67, PV Module Output\n\nSolar junction box with bypass diodes & IP67/IP68 rating – hot spot protection, MC4 connectors, optional smart monitoring. 25+ year reliability for all solar module types and climates.\n\n![Ooitech Solar Panel Laminator Complete Product Catalogue — All Models Technical Specifications & System Guide](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1774438298752758.webp)\n\n- [** Rachael](/OTCY-2754DD-Single-Layer-Double-Chamber-Automatic-BIPV-Laminator-High-Performance-Solar-Module-Produ.html)\n- [** 62516](/OTCY-2754DD-Single-Layer-Double-Chamber-Automatic-BIPV-Laminator-High-Performance-Solar-Module-Produ.html)\n\n### Ooitech Solar Panel Laminator Complete Product Catalogue — All Models Technical Specifications & System Guide\n\nOoitech solar panel laminator full catalogue: 10 models, technical specs comparison, system descriptions, safety controls, and installation requirements for PV module production lines.\n\n![CHT9951A/CHT9951B Solar Panel Hipot Insulation Resistance Tester | PV Module Safety Testing Equipment](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1774601338282260.webp)\n\n- [** Rachael](/cht9951a-cht9951b-solar-panel-hipot-insulation-resistance-tester-pv-module-safety-testing-equipment.html)\n- [** 58353](/cht9951a-cht9951b-solar-panel-hipot-insulation-resistance-tester-pv-module-safety-testing-equipment.html)\n\n### CHT9951A/CHT9951B Solar Panel Hipot Insulation Resistance Tester | PV Module Safety Testing Equipment\n\nCHT9951A/CHT9951B hipot and insulation resistance tester for solar PV module testing. DC output up to 10kV, insulation resistance up to 99GΩ, arc detection, wet leakage current test. Compliant with IEC61215 and IEC61730 standards. Ideal for solar panel pr\n\n![OTCT-A Solar Cell Tester – Electric Performance & IV Curve](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_2026032746397289.webp)\n\n- [** Rachael](/OTCT-A-Solar-Cell-Tester-High-Precision-Electric-Performance-Testing-Equipment.html)\n- [** 16021](/OTCT-A-Solar-Cell-Tester-High-Precision-Electric-Performance-Testing-Equipment.html)\n\n### OTCT-A Solar Cell Tester – Electric Performance & IV Curve\n\nOTCT-A solar cell tester – A-grade spectrum xenon lamp, 16-bit 4-ch acquisition, IEC60904-9:2020. Accurate IV curve measurement for mono & poly crystalline solar cells in production.\n",
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