# Latest PIP Research: Chemical Evolution and Electrical Degradation of TOPCon Solar Cells Under UV Exposure - - Ooitech, the world's leading solar panel production line solutions provider, supply chain expert, solar panel making machine facotry > A detailed review of recent Progress in Photovoltaics research explaining how UV exposure changes hydrogen and oxygen distributions, damages front-side SiNx/Al2O3 passivation, increases contact resistance, and reduces TOPCon solar cell efficiency. ![Latest PIP Research: Chemical Evolution and Electrical Degradation of TOPCon Solar Cells Under UV Exposure](https://cdn.ooitech.com/static/upload/image/20260724/7f797526b12f6e13e0c7d70cc0cabf75.webp) - ** 2026-07-24 - ** 0 Views - ** [Blog](/Blog.html) ### Latest PIP Research: Chemical Evolution and Electrical Degradation of TOPCon Solar Cells Under UV Exposure ##### Research Background TOPCon has become one of the mainstream technologies in the crystalline-silicon photovoltaic industry. High efficiency, however, does not automatically mean long-term stability. Differences in ultraviolet-induced degradation, or UVID, have been reported across several solar cell structures. TOPCon, PERC, and HJT cells can all be affected, but the degradation locations and dominant mechanisms are not exactly the same. Past discussions of UV degradation have often focused on high-energy photons breaking Si-H bonds, followed by hydrogen release and changes in interface passivation. The ultraviolet spectrum found in a real PV module environment is not limited to one wavelength. The illuminated front surface also contains several coupled regions, including SiNx, Al2O3, the boron emitter, and metal contacts. The authors therefore argue that UV degradation in TOPCon cells should not be studied only through hydrogen behavior. Oxygen migration and contact interfaces also matter. One detail is easy to overlook. Module glass usually filters out most UVB radiation, but it does not completely protect the illuminated cell surface from ultraviolet exposure. The spectrum discussed in the paper is dominated by UVA while still containing about 11% UVB. The authors used unencapsulated samples. The experiment is therefore not equivalent to outdoor aging of a complete module, but it helps amplify and separate the UV-sensitive regions on the cell's front surface. This paper is better read as a failure-mechanism investigation rather than a module lifetime certification study. The 6.72% relative efficiency loss after UV60 should not be directly converted into an expected outdoor module power loss. The more important point is how the authors use different characterization methods to connect front-surface passivation damage, interface oxidation, and metal contact degradation. ##### Experimental Method The study used commercial half-cut TOPCon cells measuring 182 mm × 105 mm. The cells were made from n-type Czochralski monocrystalline silicon with a resistivity of about 1.0 Ω·cm and a wafer thickness of approximately 130 μm. To compare the UV resistance of the front and rear structures, the researchers also prepared symmetrical front-surface samples and symmetrical rear-surface samples. The front structure consisted of SiNx/Al2O3. The rear structure consisted of SiOx/n+ poly-Si/Al2O3/SiNx. The main film thicknesses reported in the paper are listed below. | Structure or material | Reported specification | | --- | --- | | Commercial TOPCon cell size | 182 mm × 105 mm | | Silicon substrate | n-type Cz monocrystalline silicon | | Substrate resistivity | Approximately 1.0 Ω·cm | | Wafer thickness | Approximately 130 μm | | SiOx thickness | Approximately 1.5 nm | | n+ poly-Si thickness | Approximately 120 nm | | Al2O3 thickness | Approximately 5 nm | | SiNx thickness | Approximately 80 nm | The researchers compared minority-carrier lifetime, implied open-circuit voltage, and J0 before and after exposure to evaluate passivation stability. Time-of-flight secondary ion mass spectrometry, or ToF-SIMS, was used to track the depth distribution of hydrogen and oxygen. X-ray photoelectron spectroscopy, or XPS, depth profiling was applied to analyze the chemical states of N 1s, O 1s, Al 2p, and Si 2p. EQE, TLM, and I-V measurements then connected the thin-film changes with electrical losses at the cell level. The strength of this experimental design lies in the combined use of complete cells and symmetrical structures. Complete cells show how efficiency, Voc, Jsc, fill factor, and contact resistance change. The symmetrical front and rear samples reduce interference from the rest of the cell structure, making it easier to identify which passivation side is more sensitive to UV exposure. Figure 1: Schematics of the TOPCon cell, symmetrical front-surface structure, and symmetrical rear-surface structure. The symmetrical samples allow the UV resistance of the front SiNx/Al2O3 stack and rear poly-Si passivating contact to be compared separately. The UV exposure conditions also need to be considered on their own. The study used an ultraviolet intensity of 300 W/m², a temperature of 60°C, relative humidity of 30%, and a maximum accumulated dose of 60 kWh/m². The spectrum was concentrated mainly in the UVA range, with a smaller UVB component. This is more concentrated than ordinary outdoor exposure and is suitable for accelerating observable chemical changes on the front surface in a laboratory setting. | UV test parameter | Test condition | | --- | --- | | UV intensity | 300 W/m² | | Temperature | 60°C | | Relative humidity | 30% | | Maximum UV dose | 60 kWh/m² | | Main spectral region | UVA | | UVB content | Approximately 11% | | Sample condition | Unencapsulated | Figure 2: Ultraviolet spectrum used in the experiment. The spectrum is dominated by UVA and contains a smaller UVB component, allowing the effect of higher-energy photons on the front passivation layers to be observed. ##### Results and Discussion ###### The Front Structure Is Clearly More Sensitive to UV Than the Rear Structure Figure 3 provides the most direct comparison between the two structures. The symmetrical rear structure showed only minor changes after UV60. The symmetrical front structure continued to degrade as the UV dose increased. According to the paper, the average lifetime of the front samples decreased from 2895.6 μs to 1552.8 μs. The implied open-circuit voltage fell from 735.5 mV to 715.2 mV. The single-side J0 increased to 18.4 fA/cm², about three times its initial value. These results indicate that the main issue under UV60 was not instability of the rear TOPCon poly-Si passivating contact. It was the deterioration of passivation quality in the illuminated front-side SiNx/Al2O3 structure. The authors attribute the relative stability of the rear side to UV absorption by the 120 nm poly-Si layer. This is a reasonable mechanism based on the structure and its optical absorption characteristics, though it remains a mechanism-level interpretation. The three parameters support the same conclusion from different directions. Lower lifetime and lower iVoc point to stronger surface recombination. The increase in J0 provides more direct evidence of increased recombination current. The authors did not rely on a single indicator. Lifetime, voltage, and recombination current all show deterioration of the front structure, while the green curves representing the rear structure remain largely stable. Figure 3: Changes in lifetime, implied open-circuit voltage, and J0 for the front and rear structures under UV exposure. The red front-structure curves show greater degradation, identifying the illuminated SiNx/Al2O3 passivation stack as the main weak point. ###### ToF-SIMS Shows Redistribution of Both Hydrogen and Oxygen The ToF-SIMS depth profiles show that front-surface degradation is not caused by only one element. In Figure 4a, the hydrogen concentration increases after UV60, especially in the SiNx layer. The authors suggest that this may result not only from the commonly discussed breaking of Si-H bonds but also from the breaking of N-H bonds inside SiNx. Figure 4b shows that oxygen distribution changes as well. The oxygen concentration in the Al2O3 layer decreases slightly, while it increases near the SiNx/Al2O3 and Al2O3/Si interfaces. The authors interpret this as a result of Al-O bond breaking in Al2O3, followed by the diffusion of released oxygen toward the SiNx layer and the silicon surface. The key point is not simply that there is more oxygen. Oxygen is leaving its original lattice or bonding environment and changing the chemical state of the interfaces. The location of each curve change matters. The stronger hydrogen signal in the SiNx region shows that the upper passivation film is directly involved in the reaction. The oxygen changes near the interfaces point to chemical instability between Al2O3 and the adjacent layers. Taken together, these results help explain why front-surface degradation affects both passivation quality and the final electrical output. Figure 4: ToF-SIMS depth distributions of hydrogen and oxygen before and after UV60. Hydrogen increases in the passivation stack, while oxygen is redistributed near the interfaces, providing clues for the chemical-bond changes later identified by XPS. ###### XPS Connects N-H Bond Breaking, Oxygen Vacancies, and Increased Al-OH The fitted N 1s XPS spectra show that the proportion of N-H bonds at the SiNx/Al2O3 interface decreased from 9.64% to 5.97%. This supports the authors' conclusion that N-H bonds also participate in hydrogen release. At the same time, the N-H signal increased near the SiNx surface, suggesting that some of the released hydrogen may migrate toward the SiNx region and form new bonds there. The O 1s changes are one of the more distinctive parts of the study. The authors separated the O 1s signal into lattice oxygen, oxygen-vacancy-related components, and surface-adsorbed oxygen. After UV60, the proportion of oxygen-vacancy-related peaks increased at both the SiNx/Al2O3 and Al2O3/Si interfaces. This indicates damage to the Al2O3 film quality. The evidence expands the degradation mechanism beyond hydrogen-induced passivation loss. Hydrogen-related and oxygen-related degradation appear to work together, increasing front-surface recombination. ToF-SIMS and XPS provide different types of information. ToF-SIMS is better suited to showing where elements are distributed through the depth of the film stack. XPS helps determine the chemical state of those elements. The N-Si and N-H fitting in the N 1s spectra, together with the lattice-oxygen and oxygen-vacancy-related components in the O 1s spectra, takes the analysis from elemental location to changes in chemical bonding. The authors point out that Al-O bonds have relatively high bond energy in ideal crystalline Al2O3. Actual solar cell passivation films, however, are usually amorphous. Under-coordinated aluminum ions and oxygen vacancies can lower the local energy barrier for bond breaking. For this reason, even photons at the experiment's longest wavelength of 400 nm, corresponding to about 3.1 eV, may trigger Al-O-related structural changes in a defect-rich environment. This interpretation links thin-film defects directly with UV sensitivity. Figure 5: Fitted N 1s and O 1s XPS spectra. Changes in N-H bonding correspond to hydrogen release and migration. The increased oxygen-vacancy-related component in the O 1s spectra indicates declining Al2O3 passivation quality. ###### Al2O3 Is Not a Completely Stable Bystander Figure 7 further tracks Al 2p and Si 2p at the Al2O3/Si interface. After UV60, the proportion assigned to the Al2O3 component decreased from 69.99% to 60.36%, while Al-OH increased from 30.01% to 39.64%. This indicates a clear conversion of Al-O-related structures under ultraviolet exposure. The Si 2p results show the appearance and increase of Si2+ after UV60, while the components associated with Si, Si3+, and Si4+ decrease. Based on these results, the authors propose that free oxygen diffusing toward the Al2O3/Si interface may oxidize silicon while oxygen vacancies form in the Al2O3 layer. The XPS spectra support this interpretation, though direct in-situ characterization would still be needed to confirm the exact reaction pathway. This finding matters for TOPCon front-surface reliability. Al2O3 is intended to provide field-effect passivation and interface stability. Once Al-O-related structures begin converting to Al-OH, accompanied by a higher oxygen-vacancy concentration, the film is no longer just a protective layer. It may become part of the degradation reaction itself. Changes in the silicon oxidation states also indicate that the interface chemistry has been altered. Figure 6: Changes in the Al 2p and Si 2p XPS spectra at the Al2O3/Si interface. The conversion of Al2O3-related structures toward Al-OH and the changes in silicon oxidation states show that oxygen-related reactions participate in front-surface degradation. ###### Electrical Losses Ultimately Appear in Voc and Fill Factor Once the chemical state of the passivation stack changes, the electrical effects at the cell level become clear. In Figure 8, the EQE remains largely stable in the medium- and long-wavelength ranges but decreases below 500 nm. Reflectance remains nearly unchanged. This suggests that the short-wavelength response loss is caused mainly by stronger front-surface recombination rather than a sudden deterioration in texturing, antireflection performance, or optical absorption. Figure 7: EQE and reflectance curves before and after UV60. Reflectance remains nearly stable while short-wavelength EQE decreases, indicating that the current-response loss is mainly associated with increased front-surface recombination. The short-wavelength EQE decline agrees with the earlier increase in J0. Short-wavelength light is absorbed close to the front surface of the cell. If front-surface passivation is damaged, carriers generated in this region are more likely to recombine before collection. The loss therefore appears first in the short-wavelength EQE range. Medium- and long-wavelength light penetrates farther into the bulk or toward the rear side, so the corresponding response changes are smaller. TLM measurements show that front contact resistivity increased almost linearly with UV dose. After UV60, it reached 4.1 mΩ·cm², approximately 8.6 times its initial value. The authors suggest that free hydrogen, free oxygen, and reactive radicals produced during UV exposure may participate in reactions at the metal electrode interface, increasing contact resistance. This explanation is consistent with the resistance measurements, although the exact reaction products at the electrode interface still require more direct chemical evidence. Figure 8: Front contact resistivity increases with UV exposure dose. After UV60, the contact resistivity is approximately 8.6 times its initial value, making it an important contributor to the fill-factor loss. The final relative degradation of the cell parameters was reported as follows. | Cell parameter | Relative degradation after UV60 | | --- | --- | | Voc | 3.46% | | Jsc | 0.64% | | Fill factor | 2.82% | | Efficiency | 6.72% | | Front contact resistivity | 4.1 mΩ·cm², approximately 8.6 times the initial value | The central electrical conclusion is clear. Under UV60, the main TOPCon losses do not come from current reduction. They come from Voc loss caused by front-surface passivation degradation and fill-factor loss associated with increased front contact resistance. This also explains why looking only at Jsc can underestimate UV degradation risk. The short-wavelength EQE changes, but the total Jsc decreases by only 0.64%. Recombination and contact problems create the larger efficiency loss. In high-efficiency TOPCon cells, Voc and fill factor are highly sensitive to interface quality, passivation condition, and metal contact performance. These parameters may expose reliability weaknesses earlier than Jsc. Figure 9: Relative degradation of Voc, Jsc, fill factor, and efficiency under UV60. Efficiency decreases by 6.72%, driven mainly by Voc and fill-factor losses, while the Jsc change remains relatively small. ##### Mechanism and Application Assessment The proposed mechanism can be summarized as follows: UV exposure changes the bonding states in the front SiNx/Al2O3 structure. Si-H and N-H bonds break and release hydrogen. Al-O-related structures are transformed and oxygen vacancies form. Free oxygen migrates toward the interfaces, front-surface recombination increases, and electrochemical reactions around the contact region may increase front contact resistance. The lifetime, iVoc, J0, EQE, TLM, and I-V results provide direct support for the electrical degradation. ToF-SIMS and XPS support the migration of hydrogen and oxygen as well as the related changes in chemical bonding. The interpretation of the metal electrode interface needs more caution. The paper mainly infers this mechanism from higher contact resistance and findings in earlier studies. Elemental distribution, chemical-state measurements, or cross-sectional analysis of the electrode interface would be needed for stronger confirmation. For industrial production, the paper is a reminder that TOPCon UV reliability cannot be evaluated only through initial cell efficiency. Several factors may influence long-term energy performance: - The material quality of the front SiNx/Al2O3 passivation stack - Hydrogen concentration and the stability of Si-H and N-H bonds - Oxygen-vacancy concentration in the Al2O3 layer - Stability of the metal contact interface - UVA and UVB filtering by module glass and encapsulants - Interactions among ultraviolet exposure, moisture, heat, mechanical stress, and electrical fields When this research is considered at module level, the real spectrum reaching the cell will be filtered again by the glass and encapsulation film. Moisture, thermal stress, and electrical fields will also participate in aging. The mechanisms reported in the paper are therefore more useful as directions for material and process optimization than as a replacement for IEC testing or long-term outdoor field data. A valuable next step would be to evaluate unencapsulated cells, encapsulated mini-modules, and outdoor-exposed modules within the same validation framework. That would make it easier to determine which chemical changes remain important after realistic spectral filtering and environmental coupling. Possible process optimization directions include: - Reducing unstable hydrogen sources in the front SiNx/Al2O3 stack - Improving the amorphous Al2O3 network and controlling oxygen vacancies - Optimizing firing and metallization conditions for better contact-interface stability - Improving resistance to oxidation-related reactions around the front metal contact - Selecting encapsulation materials that reduce the direct impact of high-energy UV on the cell surface The paper does not provide a complete solution. It does define the boundaries of the problem more clearly and shows that front-surface passivation and contact engineering need to be considered together. ##### Research Conclusion: What Needs to Be Solved Next Through UV60 exposure tests, the authors show that the front SiNx/Al2O3 structure of TOPCon cells is more vulnerable to ultraviolet-induced degradation than the rear poly-Si passivating contact. The degradation is not caused by one isolated factor. Hydrogen-related processes, oxygen-related processes, and increased front contact resistance all contribute. The importance of this work lies in moving the explanation of TOPCon UV degradation beyond Si-H bond breaking alone. It presents a broader framework of front-surface chemical evolution. Reducing UVID risk will likely require coordinated optimization of the front passivation stack, interface oxygen vacancies, hydrogen management, metallization contacts, and UV filtering by module packaging. Adjusting only one film parameter may not be enough. The limitations should remain clear. The samples were unencapsulated under the reported UV conditions, and part of the proposed metal-contact degradation mechanism is still inferential. The most careful interpretation is that the paper demonstrates a clear relationship between chemical composition evolution and electrical degradation on the TOPCon front surface under UV exposure. It also provides specific targets for future studies of long-term reliability after encapsulation. ##### Reference Lou, X., Yang, N., Fu, Z., Chen, D., Chen, Y., & Verlinden, P. J. (2026). Chemical composition evolution and electrical performance degradation of TOPCon solar cells under UV exposure. Progress in Photovoltaics: Research and Applications, 1–9. ##### Ooitech's View The practical message is simple: front-side passivation and metallization should be treated as one reliability system, not as separate process steps. A stable initial Voc is not enough if UV exposure can change Al2O3 chemistry and steadily raise front contact resistance. 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