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    "url": "https://www.ooitech.com/how-to-cut-multi-piece-solar-cells-better-the-counterintuitive-truth-about-edge-loss-in-n-type-topcon-shj-and-bc-cells.html",
    "language": "en",
    "title": "How to Cut Multi-Piece Solar Cells Better? The··· | Ooitech",
    "description": "A Nano Energy study from Soochow University overturns 20 years of industry wisdom: under low-damage cutting, the p-n junction side actually collects carriers better than the n-n+ side, suggesting cutting from the p-n junction side is the smarter strategy.",
    "keywords": "solar cell cutting, edge recombination loss, TOPCon, SHJ, TBC, laser scribing, p-n junction, thermal laser separation, half-cut cells, module efficiency",
    "ogType": "website",
    "image": "https://cdn.ooitech.com/static/upload/image/20250723/1753270698863235.webp",
    "headings": [
        {
            "level": 1,
            "text": "How to Cut Multi-Piece Solar Cells Better? The Counterintuitive Truth About Edge Loss in n-type TOPCon, SHJ and BC Cells"
        },
        {
            "level": 3,
            "text": "How to Cut Multi-Piece Solar Cells Better? The Counterintuitive Truth About Edge Loss in n-type TOPCon, SHJ and BC Cells"
        },
        {
            "level": 5,
            "text": "Introduction"
        },
        {
            "level": 5,
            "text": "Core Finding: An Intrinsic Electrical Behavior That Breaks the Consensus"
        },
        {
            "level": 5,
            "text": "How to Open the Cell Edge Without Hurting It"
        },
        {
            "level": 5,
            "text": "Experimental Findings"
        },
        {
            "level": 6,
            "text": "TOPCon: emitter on the front, ultra-short hole collection path"
        },
        {
            "level": 6,
            "text": "SHJ: front collects electrons, holes take the long road"
        },
        {
            "level": 6,
            "text": "TBC: all electrodes on the back, total wipeout"
        },
        {
            "level": 6,
            "text": "TOPCon back side: the hole \"fast lane\" is suppressed"
        },
        {
            "level": 6,
            "text": "SHJ back side: the heterojunction is strong, but the TCO is a double-edged sword"
        },
        {
            "level": 6,
            "text": "TBC back side: the hole HSC is right there on the back, a home-court advantage"
        },
        {
            "level": 6,
            "text": "Industry recommendation"
        },
        {
            "level": 5,
            "text": "Ooitech's View"
        },
        {
            "level": 5,
            "text": "Tags :"
        },
        {
            "level": 5,
            "text": "Table of Contents"
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            "text": "Category"
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        {
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            "text": "Related Posts"
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            "text": "Popular Tags"
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            "level": 3,
            "text": "Request A Quote"
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            "level": 2,
            "text": "We deliver expertise you can trust our service"
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        },
        {
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            "text": "Our Experience Team"
        },
        {
            "level": 3,
            "text": "15+ Years Industry Experience"
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            "level": 2,
            "text": "What Our Client Say's about us"
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        {
            "level": 3,
            "text": "Jizzakh Polytechnic Institute"
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    "markdown": "# How to Cut Multi-Piece Solar Cells Better? The··· | Ooitech\n\n> A Nano Energy study from Soochow University overturns 20 years of industry wisdom: under low-damage cutting, the p-n junction side actually collects carriers better than the n-n+ side, suggesting cutting from the p-n junction side is the smarter strategy.\n\n![How to Cut Multi-Piece Solar Cells Better? The Counterintuitive Truth About Edge Loss in n-type TOPCon, SHJ and BC Cells](https://cdn.ooitech.com/static/upload/image/20260805/15ce62ff44f3df3b9754e60099c852f1.webp)\n\n- ** 2026-08-05\n- ** 4 Views\n- ** [Blog](/Blog.html)\n\n### How to Cut Multi-Piece Solar Cells Better? The Counterintuitive Truth About Edge Loss in n-type TOPCon, SHJ and BC Cells\n\n##### Introduction\n\nChasing higher module power, engineers often slice one big cell into 1/2, 1/3 or even more \"small cells\", then reconnect them in series and parallel inside a module. The point is to cut current and shrink the resistive power loss. But every single cut leaves an unpassivated \"wound\" along the cell edge. Those wounds turn into carrier traps, and they eat into open-circuit voltage (Voc) and fill factor (FF). The smaller the sub-cell gets, the more this edge recombination loss hurts.\n\nThe most common industry method today, \"laser scribing + mechanical cleaving\" (L&C), leaves serious thermal damage along the cut. And for years the field has agreed on one thing: scribing on the p-n junction side does the most damage, so \"the p-n junction side is the main bottleneck for edge loss\". That belief gave birth to the standard trick of \"scribing from the n-n+ side to protect the p-n junction\".\n\nBut does that widely accepted \"common sense\" really reflect the intrinsic electrical behavior of the p-n junction? Or is it just an artifact of laser heat?\n\n##### Core Finding: An Intrinsic Electrical Behavior That Breaks the Consensus\n\nA research team at the FUNSOM institute of Soochow University published work in Nano Energy using a new low-damage cutting method they call \"45° rotational cleaving\". It cleverly dodges the laser thermal damage and probes the real intrinsic electrical behavior of the p-n junction edge. The conclusion surprised the industry:\n\nUnder low-damage cutting, edge carrier collection efficiency on the p-n junction side is actually higher than on the n-n+ side. In plain terms: scribing from the p-n junction side is the better industrial strategy. That flips twenty years of accepted practice on its head.\n\n##### How to Open the Cell Edge Without Hurting It\n\nTo study the \"intrinsic electrical behavior of the p-n junction\", you first have to solve a nasty problem. Traditional laser cutting leaves a re-melted and re-solidified layer, plus microcracks and a pile of thermal damage along the edge, and all of that muddies any observation of the p-n junction and the surface recombination behavior. The team went a different way, using the anisotropic cleaving nature of silicon crystals to propose a \"45° rotational cleaving\" method:\n\nStep one: rotate the wafer 45° in-plane.\n\nStep two: pre-scratch a shallow line on the (100) plane with a diamond scriber.\n\nStep three: cleave along the {110} plane family to get an atomically flat, thermally undamaged cross-section.\n\nThe edge cross-section obtained this way keeps its structural and electrical integrity. Combined with a micrometer-resolution photovoltage imaging technique, you can scan the electrical behavior near the edge point by point, without hurting the p-n junction.\n\nThe experiment used a 532 nm laser (penetration depth about 1.3 µm), reaching roughly 1 µm spatial resolution under a 50× objective, clear enough to capture the photovoltage decay behavior within tens of micrometers of the edge.\n\n##### Experimental Findings\n\nFigure 1. Effect of cutting on p-n junction integrity (a, b), schematic of the 45° rotational cleaving method (c, d), and schematics of the three high-efficiency cell structures (e-g).\n\nFigure 1a shows the traditional L&C process scribing on the p-n junction side: first a laser ablates a groove on the cell surface (the Laser mark), then mechanical force snaps the cell apart. Figure 1b is the SEM cross-section of the edge after L&C cutting. You can clearly see the section splits into two zones. The upper part is the \"laser ablation region\", showing an obvious re-melted and re-solidified morphology. The lower part is the \"stress-separated region\", torn by mechanical force, leaving a lot of irregular microcracks and melt pools. This thermal damage is exactly what drives the leakage current spike and the drop in cell performance.\n\nWorth noting: when the laser scribes on the p-n junction side, the p-n junction itself gets completely wrecked by the heat. So the \"phenomenon\" the industry always saw, that \"the p-n junction side is the edge-loss bottleneck\", is actually an artifact of thermal damage.\n\nFigure 1c shows the 45° rotational cleaving method proposed here: rotate the wafer 45° around the in-plane axis, scratch the (100) plane with a diamond scriber, then tear along the {110} cleaving plane. Figure 1d is the SEM image of the cleaved edge, scale bar 20 µm. The cross-section is extremely flat and clean, no melt traces at all, perfectly preserving the structure and electrical integrity of the p-n junction. That is the key to studying \"intrinsic behavior\".\n\nThis work looks at three mainstream n-type high-efficiency cell technologies: TOPCon, SHJ and TBC. They share a common trait. On an n-type c-Si substrate they carry both a p-n junction (homo- or heterojunction) and an n-n+ high-low junction. So studying their edge behavior gives direct guidance for real industrial production.\n\nFigure 2. Front-side edge photovoltage analysis of TOPCon, SHJ and TBC cells.\n\nFigure 2a shows the 532 nm laser scanning from the cell front-surface edge inward, working with an XY precision stage and an electrical amplifier to record the photovoltage signal in real time, finally building a 2D photovoltage map. Figure 2b is the front-side photovoltage image of TOPCon, SHJ and TBC (left to right). Brighter color means higher photovoltage. All three cells show an obvious \"gradient band\" within ~100 µm of the edge, lower photovoltage closer to the edge. That is the direct evidence of edge recombination loss.\n\nComparing the three: TOPCon has the highest photovoltage (0.40–0.55 V) and saturates fastest. TBC has the lowest (0.36–0.49 V) and decays slowest, meaning its edge recombination is the worst. This result runs against the \"p-n junction is the bottleneck\" common sense, because the front side (the light-facing side) is usually exactly where the p-n junction sits.\n\nFigure 2c normalizes the photovoltage profile extracted along the black dashed line in Figure 2b. All three curves show \"low at the edge, high on the plateau\", but the saturation speed (which reflects the edge recombination length) differs clearly:\n\n- TOPCon: shortest decay region, near saturation within about 100 µm, smallest edge loss.\n- SHJ: mid-range decay region, near saturation at ~200 µm.\n- TBC: slowest recovery, stretching all the way to ~500 µm before full saturation, the worst edge loss.\n\nFigure 2d explains the physics behind the differences. A photogenerated hole ends up doing one of two things: getting collected by an electrode, or drifting to the edge and recombining.\n\n###### TOPCon: emitter on the front, ultra-short hole collection path\n\nThe front surface is a p+ emitter. Holes only need to cross the very thin emitter to be collected by the front electrode, so most holes \"never get the chance\" to reach the edge. At the same time, the strong field formed by p+ emitter / SiOx / n-poly-Si stays effective at the edge too, quickly separating carriers. That is the root reason TOPCon has the smallest edge loss.\n\n###### SHJ: front collects electrons, holes take the long road\n\nThe SHJ front surface is n-a-Si:H, which collects electrons. Holes have to diffuse all the way to the back p-a-Si:H before they can be collected, a very long path. Add the highly conductive TCO layer acting like a \"highway\", carrying a lot of holes laterally toward the edge, and edge recombination rises noticeably.\n\n###### TBC: all electrodes on the back, total wipeout\n\nIn TBC every electrode sits on the back. Carriers generated at the front surface must travel laterally across the whole wafer to get collected. Worse, the front Al2O3 passivation layer carries a lot of fixed negative charge, inducing a hole accumulation layer at the Si surface and forming a \"hole conducting channel\" that pushes holes even harder toward the edge.\n\nQuick note: front-side photovoltage behavior is mainly set by two things, the \"carrier collection distance\" and \"whether a lateral transport channel exists\", and it has nothing to do with the direction of the p-n junction itself.\n\nFigure 3. Back-side edge photovoltage analysis of TOPCon, SHJ and TBC cells.\n\nFigure 3a sketches the laser scanning from the back-side edge. Figure 3b is the corresponding 2D photovoltage map. Compared with Figure 2b, all three cells show lower back-side photovoltage than the front side (because the front surface usually has better anti-reflection design and higher light utilization). Figure 3c reveals something interesting: the back-side edge \"winner\" becomes TBC. Even though SHJ also has a p-n junction on the back, its edge photovoltage is actually lower than TOPCon, which further shows the \"p-n junction position\" is not the only factor deciding edge loss. Figure 3d sketches the back-side minority carrier transport mechanism. The back is special: the back n-poly-Si holds a high concentration of electrons, forming a strong-field environment that suppresses holes but promotes electron collection.\n\n###### TOPCon back side: the hole \"fast lane\" is suppressed\n\nThe high electron concentration in the back n-poly-Si suppresses hole transport. Holes must cross the whole n-type c-Si substrate to reach the front p+ emitter before they get collected. This \"long-distance transport\" makes the back-side photovoltage generally lower, but it also cuts the number of holes reaching the edge.\n\n###### SHJ back side: the heterojunction is strong, but the TCO is a double-edged sword\n\nSHJ's n-type c-Si / p-a-Si:H heterojunction really does offer stronger carrier separation than TOPCon, but its TCO has low lateral resistance and still \"short-circuits\" a fair share of holes to the edge. The result: strong separation ability does not equal small edge loss.\n\n###### TBC back side: the hole HSC is right there on the back, a home-court advantage\n\nTBC's back-side HSC faces the photogenerated holes directly. Carriers get collected right on the back, so far fewer flow to the edge, and the back-side photovoltage saturates fastest.\n\nQuick note: back-side photovoltage behavior shows a \"reversed\" trend versus the front. TBC is worst on the front but best on the back, showing that \"which side faces the light\" matters more than \"which side is the p-n junction\".\n\nFigure 4. Cross-sectional photovoltage distribution model of TOPCon and SHJ cells.\n\nIf Figures 2 and 3 look at the edge \"from the side\", then Figure 4 slices it \"crosswise\". The laser scans directly on the cross-section, so you see the whole electrical behavior from p-n junction to n-n+ in one shot. This is the most original part of the study. Figure 4a is the cross-sectional photovoltage map of TOPCon, from left to right the front side (p+ emitter / p-n junction) and the back side (n-poly-Si / n-n+ junction). You can see the left side (p-n junction) is brighter overall, and the right side (n-n+) is darker. The curve extracted in Figure 4b is very clear: from the p-n junction side to the n-n+ side, photovoltage falls monotonically, with the whole decay region around 100 µm. This result flatly rejects the traditional view that \"the p-n junction is the edge-loss bottleneck\", because under low-damage conditions the p-n junction side is instead the high-photovoltage zone. Figure 4c gives the physical reason: on the p-n junction side (p+ emitter) the minority carriers (holes) only travel a short distance to be collected, while on the n-n+ side (the n-poly-Si region) holes must cross the whole n-type c-Si to reach the p+ emitter, a long path with high recombination probability, so the loss is bigger. Figures 4d–f show the exact same trend on SHJ cells: from the back p-n junction (p-a-Si:H / n-c-Si) to the front n-n+ junction (i/n-a-Si:H / n-c-Si), photovoltage again falls monotonically. This regularity holding across different cell structures is one of the core arguments of the study.\n\nTo describe this quantitatively, the team derived a one-dimensional minority carrier diffusion model. Figure 4g is the model schematic, showing the curve (orange) decaying monotonically from the p-n junction side (hole select contact, HSC) toward the ESC side (electron select contact, ESC). Figure 4h further compares carrier behavior on the HSC and ESC sides:\n\n- HSC side: minority carriers (holes) get collected over a short distance, low recombination probability.\n- ESC side: minority carriers must diffuse a long distance to reach the HSC, recombining heavily along the way.\n- The p-n junction's carrier separation mechanism has the double benefit of heavily doped contact plus passivated contact, more efficient than a plain high-low junction (n-n+).\n\nQuick note: the cross-sectional photovoltage model quantitatively confirms that \"p-n junction side electrical performance beats the n-n+ side\", and proposes the \"minority carrier diffusion length L\" as a new metric for evaluating edge loss.\n\nFigure 5. Cross-sectional photovoltage analysis of a TOPCon cell made by the industrial thermal laser separation (TLS) method.\n\nTo check whether the conclusion from the 45° cleaving method holds for industrial cutting, the team used the \"thermal laser separation\" (TLS) method (Figure 5a) — first a laser pre-treats the p-n junction side (the Pre-grooving in the figure), then cooling water assists the separation. TLS is one of the recognized low-damage cutting techniques today. Figure 5b is the cross-sectional photovoltage image of the TOPCon after TLS cutting: the left side (p-n junction) is clearly brighter than the right side (n-n+). The quantitative curve in Figure 5c shows that from the p-n junction to the back side, photovoltage still falls monotonically, fully consistent with the 45° cleaving result.\n\nKey verification: even with the industrial TLS method (slicing directly from the p-n junction side), the photovoltage still shows the \"high p-n junction, low n-n+\" trend. This says that under low-damage cutting, the \"p-n junction\" is not a bottleneck at all, but rather where the advantage lies. The prior industry experience that \"the p-n junction side performs better\" in TLS cutting finally gets confirmed by both experiment and theory.\n\nFigure 6. Cross-sectional photovoltage analysis of TBC and THBC cells, plus a schematic of the low-damage p-n junction cutting strategy.\n\nFigures 6a and 6b are the cross-sectional photovoltage images of TBC and THBC cells. TBC has the highest photovoltage, 0.39 V, and THBC is slightly lower (0.21 V), but both show the clear \"bright p-n junction, dark n-n+\" spatial distribution. The curves extracted in Figures 6c and 6d follow the same pattern as Figure 4: monotonic decline from p-n junction toward n-n+. Worth a special mention is the small inset in Figure 6c: the \"directional distribution\" of photovoltage for each cell structure shows a \"dense upper-left, sparse lower-right\" pattern, meaning the electrical advantage of the p-n junction side is universal across structures and processes. Figure 6e explains what makes back-contact cells special: the HSC collects holes \"nearby\" on the back, and the ESC collects electrons \"nearby\" on the back. The minority carriers (holes) generated in the p-n junction region only need a short distance to reach the HSC, so the loss is small; the minority carriers in the n-n+ region have to make a long trek, so the loss is bigger. This pattern matches TOPCon and SHJ exactly. Based on all this evidence, the team proposed a brand-new cutting strategy in Figure 6f:\n\n###### Industry recommendation\n\nUnder low-damage cutting (such as TLS), you should slice from the p-n junction side. Reason: the p-n junction side has higher carrier separation efficiency plus a shorter minority carrier transport path. Even under some process disturbance, it keeps decent electrical performance. This recommendation overturns twenty years of \"avoid touching the p-n junction\" industry practice.\n\n##### Ooitech's View\n\nHonestly this is one of those findings that quietly rewrites a line-level habit rather than a headline spec. The takeaway for anyone running an n-type line: pair your laser cutting recipe with the cell's own carrier physics, and don't blindly park the scribe on the n-n+ side just because that was the old rule. Low-damage separation (TLS-style) is the real enabler here, and dialing in that process on a solar cell laser cutting machine is exactly where module makers gain or lose real Voc and FF. We build our cutting and stringing stations to keep edge damage low across TOPCon, SHJ and BC formats, so this kind of research maps straight onto production. 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The kindest person and professional in his field\n\n![](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_2026041716444445.webp)\n\n### Jizzakh Polytechnic Institute\n\n![](/template/ooitech/assets/img/icon/quote.svg)\n\nThank you again so much again for the very big big help for improving and fixing the factory and also teaching the workers how to use the machines\n\n![](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1757479675272137.webp)\n\n### Mark\n\nBIPV Philippines\n\n![](/template/ooitech/assets/img/icon/quote.svg)\n\nThanks to Ooitech for providing highly suitable BC solar cell experimental equipment.\n\n![](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1776426122864564.webp)\n\n### KTECH\n\n![](/template/ooitech/assets/img/icon/quote.svg)\n\nthank you for ooitech's professional support and on time after service.\n\n![](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1784509010217979.webp)\n\n### Diarra From Africa\n\n![](/template/ooitech/assets/img/icon/quote.svg)\n\nThanks to Ooitech for providing the fully automated production equipment—your installation and after-sales service have been excellent.\n\n![](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_2026041720921238.webp)\n\n### Amjad\n\n## Our Latest Products\n\n![SC-20P BC Cell Laser Cutting Machine with Automatic Protective Paper Cutting and Stacking](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1772440338787287.webp)\n\n- [** ooitech](/SC-20P-Automatic-Solar-Cell-Laser-Cutting-Machine-High-Precision-BC-Cell-Processing-Equipment.html)\n- [** 20407](/SC-20P-Automatic-Solar-Cell-Laser-Cutting-Machine-High-Precision-BC-Cell-Processing-Equipment.html)\n\n### SC-20P BC Cell Laser Cutting Machine with Automatic Protective Paper Cutting and Stacking\n\nSC-20P is an upgraded laser cutter based on SC-20A, designed for BC cells. It synchronously cuts both the cell and protective paper into 1/2 pieces, helping protect the blue film before and after cutting.\n\n![Automatic Bussing Machine DH200-Y | Solar Panel Busbar Soldering Equipment | Ooitech](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1774348162498246.webp)\n\n- [** Rachael](/automatic-bussing-machine-dh200-y-solar-panel-busbar-soldering-equipment-ooitech.html)\n- [** 87405](/automatic-bussing-machine-dh200-y-solar-panel-busbar-soldering-equipment-ooitech.html)\n\n### Automatic Bussing Machine DH200-Y | Solar Panel Busbar Soldering Equipment | Ooitech\n\nOoitech DH200-Y Automatic Bussing Machine delivers high-speed electromagnetic busbar soldering with 17s cycle time, supporting 166/182/210/230mm cells and 5BB-20BB configurations. Features automatic roll feeding, L/U-bend bus bar shaping, optional bypass\n\n![Photovoltaic Ribbon Wire Drawing and Tinning Integrated Production Line](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_2026051111285937.webp)\n\n- [** ooitech](/photovoltaic-ribbon-wire-drawing-and-tinning-integrated-production-line.html)\n- [** 438](/photovoltaic-ribbon-wire-drawing-and-tinning-integrated-production-line.html)\n\n### Photovoltaic Ribbon Wire Drawing and Tinning Integrated Production Line\n\nProfessional photovoltaic ribbon wire drawing and tinning integrated production line for round and flat solar ribbon manufacturing with high-speed 450M/min capacity and automatic servo control system\n\n![Automatic Solar Cell Layup Machine - High Speed MBB Half-Cell String Laying Equipment for Solar Panel Production Line](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1774318047382785.webp)\n\n- [** Rachael](/automatic-solar-cell-layup-machine-ws-cl80d-high-speed-mbb-half-cell-string-laying-equipment-for-solar-panel-production-line.html)\n- [** 12081](/automatic-solar-cell-layup-machine-ws-cl80d-high-speed-mbb-half-cell-string-laying-equipment-for-solar-panel-production-line.html)\n\n### Automatic Solar Cell Layup Machine - High Speed MBB Half-Cell String Laying Equipment for Solar Panel Production Line\n\nOoitech WS-CL80D Automatic Solar Cell Layup Machine features dual gantry dual-gripper independent operation, linear motor driven main axis with 0.01mm repeat positioning accuracy, and vision-guided placement precision of plus or minus 0.3mm. Cycle time un\n\n![Automatic Shingled Stringer SL-30C | Shingled Solar Cell Welding Machine - Ooitech](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_1774263321793147.webp)\n\n- [** ooitech](/automatic-shingled-stringer-sl-30c-shingled-solar-cell-welding-machine-ooitech.html)\n- [** 87347](/automatic-shingled-stringer-sl-30c-shingled-solar-cell-welding-machine-ooitech.html)\n\n### Automatic Shingled Stringer SL-30C | Shingled Solar Cell Welding Machine - Ooitech\n\nOoitech SL-30C Automatic Shingled Stringer is a high-speed shingled solar cell welding machine with 3000-5000 pcs/h capacity, CCD camera inspection, PID temperature curing system, and ±0.15mm overlap accuracy. Ideal for 158.75mm, 166mm, and 210mm shingled\n\n![Interconnection Busbar – Solar Cell String Current Collection](https://cdn.ooitech.com/runtime/image/w800_h600_fitblur_v2_2026032713037538.jpg.webp)\n\n- [** Rachael](/Interconnection-Busbar-for-Solar-Module-Assembly-High-Performance-Current-Collection-Solution.html)\n- [** 96497](/Interconnection-Busbar-for-Solar-Module-Assembly-High-Performance-Current-Collection-Solution.html)\n\n### Interconnection Busbar – Solar Cell String Current Collection\n\nPremium interconnection busbar solutions for solar module assembly, featuring high-purity tinned copper construction, optimized cross-sectional design for minimal power loss, and reliable current collection from cell strings to junction boxes. Essential c\n",
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